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| FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) MOSFET December 2005 FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) MOSFET 8A,20V,26m General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package. Features RDS(ON) = 26m @ VGS = 4.5 V, ID = 8A RDS(ON) = 34m @ VGS = 2.5 V, ID = 7A >2000V ESD protection Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm Pb-free and RoHS Compliant Applications Li-lon Battery Pack LE A REE I DF D1 D1 D2 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) Ratings 20 12 8 40 2.4 -55 to +150 Units V V A W oC M ENTATIO LE N MP D2 D2 1 2 3 G1 S2 G2 8 7 6 5 4 S1 Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 52 108 5 o C/W Package Marking and Ordering Information Device Marking 3300A Device FDMC3300NZA Reel Size 7" 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com (c)2005 Fairchild Semiconductor Corporation FDMC3300NZA Rev B FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V , ID = 250A ID = 250A, Referenced to 25C VDS = 16V, VGS = 0V, VGS = 12V, VDS = 0V 20 12.0 1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ RDS(ON) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250A ID = 250A, Referenced to 25C VGS = 4.5V, ID = 8A VGS = 2.5V, ID = 7A VGS = 4.5V, ID = 8A, TJ =150C VDS = 5V, ID =8 A 0.6 -3.1 20 25 29 29 1.5 26 34 38 S m V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS =0V, f = 1.0MHz f = 1.0MHz 610 165 115 1.7 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 8A, VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6 8 8 19 9 8 1 2 16 16 34 18 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Notes: 1. RJA is determined with the device mounted on a 1in2 oz.copper pad on a 1.5x1.5 in board of FR-4 material .RJC are guaranteed by design while RJA is determined by the user's board design. a. 52C/W when mounted on a 1 in2 pad of 2 oz b. 108C/W when mounted on a minimum pad of 2 oz copper Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 2A IF= 8A, dIF/dt=100A/s (Note 2) - 0.7 - 1.2 21 6 V ns nC 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 2 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN to SOURCE ON-RESISTANCE 40 2.0 VGS= 2.0V ID, DRAIN CURRENT (A) 1.8 1.6 1.4 1.2 1.0 0.8 4 8 12 30 PULSE DURATION =300S DUTY CYCLE =2.0% MAX 2.5V 3.0V 3.5V 4.0V 4.5V 20 Waveforms in Descending order: VGS= 4.5V 3.5V 3.0V 2.5V 2.0V 10 0 0 VDS, DRAIN-SOURCE VOLTAGE (V) 1 2 3 4 5 16 20 24 28 32 ID, DRAIN CURRENT (A) 36 40 Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.06 0.05 0.04 0.03 0.02 TJ = 25C PULSE DURATION=300s DUTY CYCLE=2.0% MAX ID=4A NORMALIZED DRAIN to SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -80 PULSE DURATION =300S DUTY CYCLE =2.0% MAX RDS(ON), ON-RESISTANCE (OHM) 1.6 TJ = 125C ID = 8A VGS = 4.5V -40 0 40 80 120 160 0.01 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature 40 PULSE DURATION=300s DUTY CYCLE=2.0% MAX Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 IS, REVERSE CURRENT(A) ID, DRAIN CURRENT (A) 10 1 VGS=0V 30 VDS = 5V 20 0.1 TJ=125 C 0.01 TJ=25C TJ=-55C 10 TJ = 25C TJ = 125C TJ = - 55C 1E-3 1E-4 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE(V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 www.fairchildsemi.com FDMC3300NZA RevB FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE to SOURCE VOLTAGE(V) 8 ID=8A VDD=5V VDD=10V 1000 CISS CAPACITANCE (pF) 6 COSS 4 VDD=15V CRSS 2 100 f = 1MHz VGS = 0V 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 14 16 50 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 100 RDSON LIMITED 100S Figure 8. Capacitance Characteristics 10 ID, DRAIN CURRENT(A) 8 6 4 2 0 25 ID, DRAIN CURRENT(A) 10 1mS 10mS VGS=4.5V 1 100mS VGS=4.5V SINGLE PULSE RJA=108C/W TA=25C VGS=2.5V 0.1 1S 10S DC RJA=108C/W 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE(V) 50 75 100 125 TA, AMBIENT TEMPERATURE(C) 150 Figure 9. Safe Operating Area 1000 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER(W) 100 10 SINGLE PULSE RJA=108C/W TA=25C 1 -4 10 10 -3 10 -2 10 10 t, Rectangular Pulse Duration(S) -1 0 10 1 10 2 10 3 Figure 11. Single Maximum Power Dissipation 4 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 1 Normalized Thermal Impedance ZJA DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE 1E-3 -4 10 10 -3 10 -2 10 10 t, Rectangular Pulse Duration(S) -1 0 10 1 10 2 10 3 Figure 12. Transient Thermal Response Curve 5 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET 6 www.fairchildsemi.com FDMC3300NZA RevB TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 7 FDMC3300NZA Rev B www.fairchildsemi.com |
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